Транзистор: N-MOSFET; 1,2кВ; 24А; 520Вт; ISOPLUS i5-pac™ Технические параметры
- Case: ISOPLUS i5-pac™
- Channel kind: enhanced
- Drain current: 24A
- Drain-source voltage: 1.2kV
- Gate charge: 360нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.34Ω
- Power dissipation: 520W
- Type of transistor: N-MOSFET
