Транзистор: N-MOSFET; 1кВ; 30А; 800Вт; PLUS264™; 1мкс Технические параметры
- Case: PLUS264™
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 1kV
- Features of semiconductor devices: linear power mosfet
- Gate charge: 545нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.45Ω
- Power dissipation: 800W
- Reverse recovery time: 1µs
- Type of transistor: N-MOSFET
