Технические параметры
- Drain current: 30A
- Reverse recovery time: 1µs
- Gate charge: 545nC
- Channel kind: enhanced
- Kind of package: tube
- Drain-source voltage: 1kV
- Features of semiconductor devices: linear power mosfet
- Mounting: THT
- Case: PLUS264™
- Type of transistor: N-MOSFET
- On-State Resistance: 0.45Ω
- Power dissipation: 800W