Технические параметры
- Drain current: 62A
- Reverse recovery time: 500ns
- Gate charge: 550nC
- Channel kind: enhanced
- Kind of package: tube
- Drain-source voltage: 500V
- Features of semiconductor devices: linear power mosfet
- Mounting: THT
- Case: PLUS264™
- Type of transistor: N-MOSFET
- On-State Resistance: 0.1Ω
- Power dissipation: 800W