Транзистор: N-MOSFET; 4,5кВ; 2А; 220Вт; ISOPLUS i5-pac™; 1,75мкс Технические параметры
- Case: ISOPLUS i5-pac™
- Channel kind: enhanced
- Drain current: 2A
- Drain-source voltage: 4.5kV
- Features of semiconductor devices: standard power mosfet
- Gate charge: 180нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 20Ω
- Power dissipation: 220W
- Reverse recovery time: 1.75µs
- Type of transistor: N-MOSFET