Технические параметры
- Drain current: 2A
- Reverse recovery time: 1.75µs
- Gate charge: 180nC
- Channel kind: enhanced
- Kind of package: tube
- Drain-source voltage: 4.7kV
- Features of semiconductor devices: standard power mosfet
- Mounting: THT
- Case: ISOPLUS i5-pac™
- Type of transistor: N-MOSFET
- On-State Resistance: 20Ω
- Power dissipation: 220W