Транзистор: N-MOSFET; 4,5кВ; 960Вт; TO247PLUS-HV; 660нс Технические параметры
- Case: TO247PLUS-HV
- Channel kind: enhanced
- Drain-source voltage: 4.5kV
- Features of semiconductor devices: standard power mosfet
- Gate charge: 88нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 40Ω
- Power dissipation: 960W
- Reverse recovery time: 660ns
- Type of transistor: N-MOSFET