Технические параметры
- Reverse recovery time: 660ns
- Gate charge: 88nC
- Channel kind: enhanced
- Kind of package: tube
- Drain-source voltage: 4.5kV
- Features of semiconductor devices: standard power mosfet
- Mounting: THT
- Case: TO247PLUS-HV
- Type of transistor: N-MOSFET
- On-State Resistance: 40Ω
- Power dissipation: 960W