Транзистор: N-MOSFET; 3кВ; 4А; 960Вт; TO247PLUS-HV; 420нс Технические параметры
- Case: TO247PLUS-HV
- Channel kind: enhanced
- Drain current: 4A
- Drain-source voltage: 3kV
- Features of semiconductor devices: standard power mosfet
- Gate charge: 139нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- Power dissipation: 960W
- Reverse recovery time: 420ns
- Type of transistor: N-MOSFET