Технические параметры
- Drain current: 4A
- Reverse recovery time: 420ns
- Gate charge: 139nC
- Channel kind: enhanced
- Kind of package: tube
- Drain-source voltage: 3kV
- Features of semiconductor devices: standard power mosfet
- Mounting: THT
- Case: TO247PLUS-HV
- Type of transistor: N-MOSFET
- Power dissipation: 960W