Транзистор: N-MOSFET; 2кВ; 6А; 960Вт; TO247PLUS-HV; 520нс Технические параметры
- Case: TO247PLUS-HV
- Channel kind: enhanced
- Drain current: 6A
- Drain-source voltage: 2kV
- Features of semiconductor devices: standard power mosfet
- Gate charge: 143нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 4Ω
- Power dissipation: 960W
- Reverse recovery time: 520ns
- Type of transistor: N-MOSFET