Технические параметры
- Drain current: -2.3A
- #Promotion: vishay_201906
- Gate charge: 23.2nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -150V
- Mounting: SMD
- Case: SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 0.295Ω
- Power dissipation: 3.8W