Технические параметры
- Drain current: -23.5A
- #Promotion: vishay_201906
- Gate charge: 61nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -30V
- Mounting: SMD
- Case: SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 5mΩ
- Power dissipation: 5W