Технические параметры
- Drain current: -15.4A
- #Promotion: vishay_201906
- Gate charge: 44.8nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±25V
- Drain-source voltage: -30V
- Mounting: SMD
- Case: SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 8.8mΩ
- Power dissipation: 3.8W