Технические параметры
- Drain current: -6.6A
- #Promotion: vishay_201906
- Gate charge: 28nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: -12V
- Mounting: SMD
- Case: TSOP6
- Type of transistor: P-MOSFET
- On-State Resistance: 0.025Ω
- Power dissipation: 1.67W