Технические параметры
- Drain current: -53A
- #Promotion: vishay_201906
- Gate charge: 220nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -100V
- Mounting: SMD
- Case: D2PAK
- Type of transistor: P-MOSFET
- On-State Resistance: 0.019Ω
- Power dissipation: 125W