Технические параметры
- Drain current: -8.19A
- #Promotion: vishay_201906
- Gate charge: 26nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -60V
- Mounting: SMD
- Case: DPAK
- Type of transistor: P-MOSFET
- On-State Resistance: 0.06Ω
- Power dissipation: 2.3W