Технические параметры
- Drain current: 3/-2.2A
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Transistor kind: complementary
- Gate-source voltage: ±20V
- Drain-source voltage: 30/-30V
- Mounting: SMD
- Case: DFN3020B-8
- Type of transistor: N/P-MOSFET
- On-State Resistance: 0.18/0.33Ω
- Power dissipation: 1.5W