Технические параметры
- Drain current: -94A
- #Promotion: vishay_201906
- Gate charge: 186nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -30V
- Mounting: SMD
- Case: DPAK
- Type of transistor: P-MOSFET
- On-State Resistance: 3.2mΩ
- Power dissipation: 45W