Технические параметры
- Drain current: 9.5A
- Gate charge: 19nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tube
- Gate-source voltage: ±20V
- Drain-source voltage: 800V
- Mounting: THT
- Case: SC67
- Type of transistor: N-MOSFET
- On-State Resistance: 460mΩ
- Power dissipation: 40W