Технические параметры
- Drain current: -50A
- Gate charge: 43.1nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±25V
- Drain-source voltage: -30V
- Mounting: SMD
- Case: PowerPAK® SO8
- Type of transistor: P-MOSFET
- On-State Resistance: 9.5mΩ
- Power dissipation: 31W