Транзистор: N-MOSFET; полевой; 650В; 60А; Idm: 187,5А; 595Вт Технические параметры
- Case: TO247-3
- Channel kind: enhanced
- Drain current: 60A
- Drain-source voltage: 650V
- Gate charge: 225нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 27.4mΩ
- Polarisation: unipolar
- Power dissipation: 595W
- Pulsed drain current: 187.5A
- Technology: SuperFET®
- Type of transistor: N-MOSFET