Транзистор: N-MOSFET x2; TrenchT2™; полевой; 75В; 120А; Idm: 500А Технические параметры
- Case: ISOPLUS i4-pac™ x024a
- Channel kind: enhanced
- Drain current: 120A
- Drain-source voltage: 75V
- Gate charge: 178нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 5.8mΩ
- Polarisation: unipolar
- Power dissipation: 170W
- Pulsed drain current: 500A
- Reverse recovery time: 66ns
- Semiconductor structure: double series
- Technology: TrenchT2™
- Type of transistor: N-MOSFET x2