Транзистор: N-MOSFET x2; PolarHV™; полевой; 600В; 12А; Idm: 66А Технические параметры
- Case: ISOPLUS i4-pac™ x024a
- Channel kind: enhanced
- Drain current: 12A
- Drain-source voltage: 600V
- Gate charge: 58нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 350mΩ
- Polarisation: unipolar
- Power dissipation: 130W
- Pulsed drain current: 66A
- Reverse recovery time: 200ns
- Semiconductor structure: double series
- Technology: PolarHV™
- Type of transistor: N-MOSFET x2