Транзистор: N-MOSFET x2; Trench; полевой; 250В; 30А; Idm: 130А; 84нс Технические параметры
- Case: ISOPLUS i4-pac™ x024a
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 250V
- Gate charge: 78нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 60mΩ
- Polarisation: unipolar
- Power dissipation: 125W
- Pulsed drain current: 130A
- Reverse recovery time: 84ns
- Semiconductor structure: double series
- Technology: Trench
- Type of transistor: N-MOSFET x2