Транзистор: N-MOSFET; полевой; 600В; 19А; ISOPLUS220™; 430нс Технические параметры
- Case: ISOPLUS220™
- Channel kind: enhanced
- Drain current: 19A
- Drain-source voltage: 600V
- Gate charge: 70нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 125mΩ
- Polarisation: unipolar
- Reverse recovery time: 430ns
- Technology: CoolMOS™
- Type of transistor: N-MOSFET