Технические параметры
- Technology: CoolMOS™
- Drain current: 25A
- Reverse recovery time: 550ns
- Gate charge: 180nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 800V
- Mounting: THT
- Case: ISOPLUS220™
- Type of transistor: N-MOSFET
- On-State Resistance: 150mΩ