Транзистор: N-MOSFET; полевой; 800В; 25А; ISOPLUS220™; 550нс Технические параметры
- Case: ISOPLUS220™
- Channel kind: enhanced
- Drain current: 25A
- Drain-source voltage: 800V
- Gate charge: 180нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 150mΩ
- Polarisation: unipolar
- Reverse recovery time: 550ns
- Technology: CoolMOS™
- Type of transistor: N-MOSFET