Технические параметры
- Technology: CoolMOS™
- Drain current: 7.6A
- Reverse recovery time: 340ns
- Gate charge: 30nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 600V
- Mounting: THT
- Case: TO220FP
- Type of transistor: N-MOSFET
- On-State Resistance: 200mΩ