Транзистор: N-MOSFET; полевой; 600В; 7,6А; TO220FP; 340нс Технические параметры
- Case: TO220FP
- Channel kind: enhanced
- Drain current: 7.6A
- Drain-source voltage: 600V
- Gate charge: 30нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 200mΩ
- Polarisation: unipolar
- Reverse recovery time: 340ns
- Technology: CoolMOS™
- Type of transistor: N-MOSFET