Транзистор: N-MOSFET; полевой; 600В; 8,5А; TO220FP; 390нс Технические параметры
- Case: TO220FP
- Channel kind: enhanced
- Drain current: 8.5A
- Drain-source voltage: 600V
- Gate charge: 52нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 165mΩ
- Polarisation: unipolar
- Reverse recovery time: 390ns
- Technology: CoolMOS™
- Type of transistor: N-MOSFET