Технические параметры
- Technology: TrenchT2™
- Drain current: 130A
- Reverse recovery time: 41ns
- Gate charge: 79nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 65V
- Pulsed drain current: 330A
- Mounting: THT
- Case: TO220
- Type of transistor: N-MOSFET
- On-State Resistance: 6.6mΩ
- Power dissipation: 250W