Транзистор: P-MOSFET; -60В; -5,1А; Idm: -32А; 15Вт Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: -5.1A
- Drain-source voltage: -60V
- Gate charge: 18нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 256mΩ
- Polarisation: unipolar
- Power dissipation: 15W
- Pulsed drain current: -32A
- Type of transistor: P-MOSFET