Технические параметры
- Drain current: -4A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: -60V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT457
- Type of transistor: P-MOSFET
- On-State Resistance: 100mΩ
- Power dissipation: 1.6W