Транзистор: N/P-MOSFET; полевой; комплементарная пара; 60/-60В Технические параметры
- Case: ECH8
- Channel kind: enhanced
- Drain current: 4.7/-3.5A
- Drain-source voltage: 60/-60V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 55/94mΩ
- Polarisation: unipolar
- Power dissipation: 1.5W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET