Транзистор: N-MOSFET; полевой; 600В; 65,8А; 595Вт; TO247 Технические параметры
- Case: TO247
- Channel kind: enhanced
- Drain current: 65.8A
- Drain-source voltage: 600V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 23mΩ
- Polarisation: unipolar
- Power dissipation: 595W
- Type of transistor: N-MOSFET