Транзистор: N-MOSFET; полевой; 600В; 24А; 357Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: 24A
- Drain-source voltage: 600V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 104mΩ
- Polarisation: unipolar
- Power dissipation: 357W
- Type of transistor: N-MOSFET