Транзистор: P-MOSFET; полевой; -20В; -5,5А; 1,6Вт; SuperSOT-6 Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: -5.5A
- Drain-source voltage: -20V
- Gate-source voltage: ±12V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 53mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Type of transistor: P-MOSFET