Транзистор: N/P-MOSFET; полевой; комплементарная пара; 25/-25В Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: 0.22/-0.12A
- Drain-source voltage: 25/-25V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 9/10Ω
- Polarisation: unipolar
- Power dissipation: 0.9W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET