Транзистор: N/P-MOSFET; полевой; комплементарная пара; 20/-20В Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: 2.7/-1.9A
- Drain-source voltage: 20/-20V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 130/270mΩ
- Polarisation: unipolar
- Power dissipation: 0.96W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET