Транзистор: P-MOSFET; полевой; -20В; -4А; 1,2Вт; SuperSOT-6 Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: -4A
- Drain-source voltage: -20V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 105mΩ
- Polarisation: unipolar
- Power dissipation: 1.2W
- Type of transistor: P-MOSFET