Транзистор: P-MOSFET; полевой; -30В; -3,6А; 1,6Вт; SuperSOT-6 Технические параметры
- Case: SuperSOT-6
- Channel kind: enhanced
- Drain current: -3.6A
- Drain-source voltage: -30V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 115mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Type of transistor: P-MOSFET