Транзистор: P-MOSFET; полевой; -60В; -3А; 1,6Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -3A
- Drain-source voltage: -60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 192mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Type of transistor: P-MOSFET