Транзистор: N-MOSFET; полевой; 150В; 118А; 429Вт; TO247 Технические параметры
- Case: TO247
- Channel kind: enhanced
- Drain current: 118A
- Drain-source voltage: 150V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 5.9mΩ
- Polarisation: unipolar
- Power dissipation: 429W
- Type of transistor: N-MOSFET