Транзистор: P-MOSFET; полевой; -30В; -2,9А; 1,4Вт; WDFN6 Технические параметры
- Case: WDFN6
- Channel kind: enhanced
- Drain current: -2.9A
- Drain-source voltage: -30V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 140mΩ
- Polarisation: unipolar
- Power dissipation: 1.4W
- Type of transistor: P-MOSFET