Транзистор: P-MOSFET; полевой; -12В; -10А; 2,4Вт; WDFN6 Технические параметры
- Case: WDFN6
- Channel kind: enhanced
- Drain current: -10A
- Drain-source voltage: -12V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 21mΩ
- Polarisation: unipolar
- Power dissipation: 2.4W
- Type of transistor: P-MOSFET