Транзистор: P-MOSFET; полевой; -30В; -20А; 41Вт; WDFN8 Технические параметры
- Case: WDFN8
- Channel kind: enhanced
- Drain current: -20A
- Drain-source voltage: -30V
- Gate-source voltage: ±25V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 15mΩ
- Polarisation: unipolar
- Power dissipation: 41W
- Type of transistor: P-MOSFET