Транзистор: P-MOSFET; полевой; -100В; -15А; 40Вт; WDFN8 Технические параметры
- Case: WDFN8
- Channel kind: enhanced
- Drain current: -15A
- Drain-source voltage: -100V
- Gate-source voltage: ±25V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 104mΩ
- Polarisation: unipolar
- Power dissipation: 40W
- Type of transistor: P-MOSFET