Транзистор: P-MOSFET; полевой; -150В; -0,8А; 1,5Вт; SuperSOT-3 Технические параметры
- Case: SuperSOT-3
- Channel kind: enhanced
- Drain current: -0.8A
- Drain-source voltage: -150V
- Gate-source voltage: ±25V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 2.2Ω
- Polarisation: unipolar
- Power dissipation: 1.5W
- Type of transistor: P-MOSFET