Транзистор: N-MOSFET; полевой; 60В; 80А; 310Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: 80A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 7.8mΩ
- Polarisation: unipolar
- Power dissipation: 310W
- Type of transistor: N-MOSFET