Транзистор: N-MOSFET; полевой; 150В; 26А; 150Вт; TO220AB Технические параметры
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 26A
- Drain-source voltage: 150V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 97mΩ
- Polarisation: unipolar
- Power dissipation: 150W
- Type of transistor: N-MOSFET