Транзистор: N-MOSFET; полевой; 500В; 4,8А; 130Вт; TO220 Технические параметры
- Case: TO220
- Channel kind: enhanced
- Drain current: 4.8A
- Drain-source voltage: 500V
- Gate-source voltage: ±25V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 850mΩ
- Polarisation: unipolar
- Power dissipation: 130W
- Type of transistor: N-MOSFET