Транзистор: N-MOSFET; полевой; 500В; 10,8А; 38,5Вт; TO220F Технические параметры
- Case: TO220F
- Channel kind: enhanced
- Drain current: 10.8A
- Drain-source voltage: 500V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 265mΩ
- Polarisation: unipolar
- Power dissipation: 38.5W
- Type of transistor: N-MOSFET