Транзистор: N-MOSFET; полевой; 100В; 12,7А; 33,8Вт; TO220F Технические параметры
- Case: TO220F
- Channel kind: enhanced
- Drain current: 12.7A
- Drain-source voltage: 100V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 38.2mΩ
- Polarisation: unipolar
- Power dissipation: 33.8W
- Type of transistor: N-MOSFET