Транзистор: P-MOSFET; полевой; -80В; -2,1А; 3,1Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: -2.1A
- Drain-source voltage: -80V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 308mΩ
- Polarisation: unipolar
- Power dissipation: 3.1W
- Type of transistor: P-MOSFET